Manufacturer Part Number
SI7317DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel enhancement-mode power MOSFET with low on-resistance and fast switching speed.
Product Features and Performance
Low on-resistance (Rds(on) = 1.2Ω @ 500mA, 10V)
High drain current capability (Id = 2.8A @ 25°C)
Wide operating temperature range (-55°C to 150°C)
Low gate charge (Qg = 9.8nC @ 10V)
Fast switching speed
Suitable for use in high-efficiency power conversion applications
Product Advantages
Excellent power efficiency
High power density
Reliable operation over wide temperature range
Easy to drive and integrate
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 150V
Gate-to-Source Voltage (Vgs): ±30V
Input Capacitance (Ciss): 365pF @ 75V
Power Dissipation (Tc): 19.8W
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and automotive applications
Compatibility
Surface mount package (PowerPAK 1212-8)
Application Areas
Power supplies
Motor drives
Lighting control
Industrial automation
Automotive electronics
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and performance
Wide operating temperature range
Easy to drive and integrate
Reliable operation in industrial and automotive environments
RoHS3 compliance for environmental safety