SI7308DN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7308DN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Products

Transistors - FETs, MOSFETs - Single

Product Features and Performance

N-Channel MOSFET

Drain to Source Voltage (Vdss): 60 V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V

Current Continuous Drain (Id) @ 25°C: 6A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V

Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)

Vgs(th) (Max) @ Id: 3V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V

Product Advantages

High efficiency and low power consumption

Reliable performance across wide temperature range

Compact surface mount package

Key Technical Parameters

Transistor Type: N-Channel MOSFET

Drain to Source Voltage (Vdss): 60 V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V

Current Continuous Drain (Id) @ 25°C: 6A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V

Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)

Quality and Safety Features

ROHS3 Compliant

Reliable performance across wide temperature range: -55°C ~ 150°C (TJ)

Compatibility

Mounting Type: Surface Mount

Application Areas

Suitable for various power management and control applications

Product Lifecycle

Current product offering

Replacement/upgrade options available

Key Reasons to Choose This Product

High efficiency and low power consumption

Reliable performance across wide temperature range

Compact surface mount package

ROHS3 Compliant

Suitable for various power management and control applications