Manufacturer Part Number
SI7309DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Single
Product Features and Performance
P-Channel MOSFET
60V Drain to Source Voltage
115mΩ Max On-Resistance @ 3.9A, 10V
8A Continuous Drain Current @ 25°C
600pF Max Input Capacitance @ 30V
22nC Max Gate Charge @ 10V
-55°C to 150°C Operating Temperature Range
Product Advantages
Low On-Resistance
High Current Handling Capability
Wide Temperature Range
Surface Mount Package
Key Technical Parameters
Vdss: 60V
Vgs (Max): ±20V
Rds On (Max): 115mΩ
Id (Continuous): 8A
Ciss (Max): 600pF
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for Surface Mount Applications
Application Areas
Power Management
Motor Drives
Industrial Controls
Product Lifecycle
No information on discontinuation or replacements
Key Reasons to Choose This Product
Low On-Resistance for Efficient Power Handling
High Current Capability for Demanding Applications
Wide Temperature Range for Diverse Environments
Surface Mount Package for Compact Design
SI7308DN-TI-GE3Electro-Films (EFI) / Vishay