SI7252DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7252DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Dual N-Channel PowerPAK SO-8 MOSFET with low on-resistance and high current capability.

Product Features and Performance

Trench MOSFET technology

Dual N-Channel configuration

Low on-resistance of 18mΩ @ 15A, 10V

Continuous drain current of 36.7A @ 25°C

High input capacitance of 1170pF @ 50V

Logic level gate with Vgs(th) of 3.5V @ 250μA

Low gate charge of 27nC @ 10V

Product Advantages

Compact PowerPAK SO-8 dual package

Efficient heat dissipation

Low on-resistance for low power loss

High current capability

Logic level gate for easy drive

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100V

Power Dissipation (Pd): 46W

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Moisture Sensitivity Level (MSL): 1

Compatibility

Suitable for surface mount applications

Application Areas

Suitable for high-power, high-efficiency switching applications

Ideal for motor drives, power supplies, and other power conversion circuits

Product Lifecycle

Currently available

No information on potential discontinuation or replacements

Key Reasons to Choose This Product

Excellent performance-to-size ratio with low on-resistance and high current capability

Compact dual-channel package for space-constrained designs

Efficient heat dissipation for reliable operation

Logic level gate for easy driving and integration

RoHS3 compliance for environmentally-friendly applications