SI5515CDC-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI5515CDC-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

RoHS3 Compliant

1206-8 ChipFET Packaging

N and P-Channel Configuration

20V Drain to Source Voltage (Vdss)

36mOhm Max Rds On @ 6A, 4.5V

MOSFET (Metal Oxide) Technology

4A Max Continuous Drain Current (Id) @ 25°C

632pF Max Input Capacitance (Ciss) @ 10V

Logic Level Gate FET Feature

800mV Max Gate Threshold Voltage (Vgs(th)) @ 250A

3nC Max Gate Charge (Qg) @ 5V

Product Advantages

RoHS3 Compliant

High Performance MOSFET Array

Compact 1206-8 ChipFET Package

Wide Operating Temperature Range (-55°C ~ 150°C)

High Power Handling Capability (3.1W Max)

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V

Current Continuous Drain (Id) @ 25°C: 4A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V

Vgs(th) (Max) @ Id: 800mV @ 250A

Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V

Quality and Safety Features

RoHS3 Compliant

Wide Operating Temperature Range (-55°C ~ 150°C)

Compatibility

Surface Mount Mounting Type

Application Areas

Suitable for a wide range of power management and control applications, such as power supplies, motor drives, and industrial automation.

Product Lifecycle

Current product, no indication of discontinuation.

Replacements and upgrades may be available from Vishay / Siliconix.

Key Reasons to Choose This Product

High performance MOSFET array in compact 1206-8 ChipFET package

Wide operating temperature range and high power handling capability

RoHS3 compliance for environmentally-friendly applications

Suitable for a variety of power management and control applications