SI5513CDC-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI5513CDC-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Vishay / Siliconix SI5513CDC-T1-GE3 is a discrete semiconductor product, specifically a transistor with FET (Field-Effect Transistor) technology.

Product Features and Performance

N and P-Channel MOSFET configuration

Drain to Source Voltage (Vdss) of 20V

Rds On (Max) of 55mOhm @ 4.4A, 4.5V

Continuous Drain Current (Id) of 4A at 25°C

Input Capacitance (Ciss) of 285pF @ 10V

Logic Level Gate with Vgs(th) (Max) of 1.5V @ 250A

Gate Charge (Qg) of 4.2nC @ 5V

Product Advantages

High performance N and P-Channel MOSFET in a compact package

Suitable for various power conversion and control applications

Excellent on-resistance and switching characteristics

Key Technical Parameters

MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology

8-SMD, Flat Lead package

Operating Temperature range of -55°C to 150°C (TJ)

Maximum Power Dissipation of 3.1W

Quality and Safety Features

RoHS3 compliant

Tape & Reel (TR) packaging

Compatibility

Suitable for surface mount applications

Application Areas

Power conversion and control circuits

Motor drives

Switching power supplies

Audio amplifiers

Industrial and consumer electronics

Product Lifecycle

Currently available

No information on discontinuation or replacement

Several Key Reasons to Choose This Product

High-performance N and P-Channel MOSFET in a compact package

Excellent on-resistance and switching characteristics

Wide operating temperature range

RoHS3 compliance for environmentally-friendly applications

Suitable for various power conversion and control applications