SI5513DC-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI5513DC-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Arrays

Product Features and Performance

ROHS3 Compliant

1206-8 ChipFET Package

TrenchFET Series

Tape & Reel (TR) Packaging

Operating Temperature: -55°C ~ 150°C (TJ)

Power Max: 1.1W

N and P-Channel Configuration

Drain to Source Voltage (Vdss): 20V

Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V

MOSFET (Metal Oxide) Technology

Current Continuous Drain (Id) @ 25°C: 3.1A, 2.1A

Logic Level Gate FET Feature

Vgs(th) (Max) @ Id: 1.5V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V

Surface Mount Mounting Type

Product Advantages

ROHS3 Compliant

Compact 1206-8 ChipFET Package

Wide Operating Temperature Range

High Power Handling Capability

Low On-Resistance

Logic Level Gate Control

Suitable for Surface Mount Applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V

Current Continuous Drain (Id) @ 25°C: 3.1A, 2.1A

Vgs(th) (Max) @ Id: 1.5V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V

Quality and Safety Features

ROHS3 Compliant

Compatibility

Suitable for a wide range of electronic applications

Application Areas

Suitable for a variety of electronic applications that require high-performance, logic-level controlled MOSFET devices

Product Lifecycle

Current product, no information on discontinuation or replacements

Several Key Reasons to Choose This Product

ROHS3 Compliant

Compact 1206-8 ChipFET Package

Wide Operating Temperature Range

High Power Handling Capability

Low On-Resistance

Logic Level Gate Control

Suitable for Surface Mount Applications