Manufacturer Part Number
SI5504BDC-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Arrays
Product Features and Performance
N and P-Channel Configuration
MOSFET (Metal Oxide) Technology
Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Current Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Vgs(th) (Max) @ Id: 3V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Product Advantages
Wide operating temperature range of -55°C ~ 150°C (TJ)
High power rating of 3.12W, 3.1W
Surface Mount package for easy integration
Key Technical Parameters
Manufacturer's packaging: 1206-8 ChipFET
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET
Series: TrenchFET
Package: Tape & Reel (TR)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Can be used in a wide range of electronic applications
Application Areas
Suitable for use in various electronic circuits and devices
Product Lifecycle
Active product, no indication of discontinuation
Replacements and upgrades may be available
Key Reasons to Choose This Product
Wide operating temperature range
High power rating
Compact surface mount package
RoHS compliance
Suitable for a variety of electronic applications
SI5504DC-E3Electro-Films (EFI) / Vishay