Manufacturer Part Number
SI5515DC-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
The SI5515DC-T1-E3 is a dual N-channel and P-channel MOSFET transistor array in an 8-SMD, Flat Lead package.
Product Features and Performance
Dual N-channel and P-channel MOSFET configuration
Logic Level Gate
Low On-resistance
Fast switching speed
Wide operating temperature range of -55°C to 150°C
High power handling capability up to 1.1W
Product Advantages
Compact 8-SMD package for space-saving design
Balanced N-channel and P-channel performance
Suitable for various low-power switching and control applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
On-resistance (Rds(on)): 40mΩ @ 4.4A, 4.5V
Continuous Drain Current (Id): 4.4A @ 25°C, 3A
Threshold Voltage (Vgs(th)): 1V @ 250µA
Gate Charge (Qg): 7.5nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Suitable for Tape & Reel (TR) packaging
Compatibility
The SI5515DC-T1-E3 is compatible with various low-power electronic circuits and systems.
Application Areas
Switching and control circuits
Power management
Amplifier and driver circuits
General-purpose low-power electronics
Product Lifecycle
The SI5515DC-T1-E3 is an active product and not nearing discontinuation.
Replacement or upgrade options may be available from Vishay/Siliconix or other MOSFET manufacturers.
Key Reasons to Choose This Product
Compact 8-SMD package for space-saving design
Balanced N-channel and P-channel performance for versatile applications
Low on-resistance for efficient power handling
Wide operating temperature range for various environmental conditions
RoHS3 compliance for environmentally friendly applications
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