Manufacturer Part Number
SI5435BDC-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
ROHS3 Compliant
TrenchFET series
P-Channel MOSFET
-55°C to 150°C operating temperature
30V drain-source voltage
±20V gate-source voltage
45mΩ max on-resistance at 4.3A, 10V
3A continuous drain current at 25°C
3W max power dissipation
3V max gate threshold voltage at 250μA
24nC max gate charge at 10V
Product Advantages
Low on-resistance
Wide operating temperature range
Compact 1206 ChipFET package
Key Technical Parameters
MOSFET Technology
30V Drain-Source Voltage
3A Continuous Drain Current
45mΩ Max On-Resistance
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount Mounting
Application Areas
General Purpose Power Management
Switching Circuits
Power Supplies
Product Lifecycle
Current product, no discontinuation or replacement information available
Key Reasons to Choose
Low on-resistance for efficient power handling
Wide operating temperature range for versatile applications
Compact 1206 package for space-constrained designs