SI5441BDC-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI5441BDC-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

This is a P-channel MOSFET transistor from the TrenchFET series.

Product Features and Performance

Drain-to-Source Voltage (Vdss) of 20V

Maximum Gate-to-Source Voltage (Vgs) of ±12V

On-Resistance (Rds(on)) of 45mΩ at 4.4A and 4.5V

Continuous Drain Current (Id) of 4.4A at 25°C

Maximum Power Dissipation of 1.3W at 25°C

Gate Charge (Qg) of 22nC at 4.5V

Operating Temperature Range of -55°C to 150°C

Product Advantages

Low on-resistance for improved efficiency

High current handling capability

Wide temperature range for diverse applications

Compact 1206-8 ChipFET package

Key Technical Parameters

MOSFET Technology: Trench

FET Type: P-Channel

Threshold Voltage (Vgs(th)) of 1.4V at 250μA

Drive Voltage Range: 2.5V to 4.5V

Quality and Safety Features

RoHS3 compliant

ESD protection

Compatibility

This MOSFET is suitable for a wide range of power management, switching, and control applications.

Application Areas

Power supplies

Motor drives

Lighting control

Industrial automation

Consumer electronics

Product Lifecycle

This product is currently in production and available for purchase. There are no indications of it being discontinued in the near future.

Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

Reliable performance across a wide temperature range

Compact and space-saving 1206-8 ChipFET package

Compliance with RoHS3 regulations for environmental responsibility