Manufacturer Part Number
SI5441DC-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Product Features and Performance
P-Channel MOSFET
Trench Technology
Drain to Source Voltage (Vdss) of 20V
Vgs (Max) of ±12V
Rds On (Max) of 55mOhm @ 3.9A, 4.5V
Continuous Drain Current (Id) of 3.9A @ 25°C
Power Dissipation (Max) of 1.3W
Vgs(th) (Max) of 1.4V @ 250A
Drive Voltage (Max Rds On, Min Rds On) of 2.5V, 4.5V
Gate Charge (Qg) (Max) of 22nC @ 4.5V
Product Advantages
Trench Technology for low on-resistance and high current handling
Wide operating temperature range of -55°C to 150°C
Compact 1206-8 ChipFET package
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Vgs (Max): ±12V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.9A, 4.5V
Continuous Drain Current (Id) @ 25°C: 3.9A
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 1.4V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Quality and Safety Features
RoHS3 Compliant
Tape & Reel (TR) packaging
Compatibility
Surface Mount
8-SMD, Flat Lead package
Application Areas
Power management
Motor control
Amplifier circuits
Switching circuits
Product Lifecycle
Active product
Replacements and upgrades available
Key Reasons to Choose This Product
Trench technology for low on-resistance and high current handling
Wide operating temperature range of -55°C to 150°C
Compact 1206-8 ChipFET package for space-saving design
RoHS3 compliance for environmental responsibility
Tape & Reel packaging for efficient manufacturing integration