SI5435BDC-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI5435BDC-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

This product is a discrete semiconductor device, specifically a single P-channel MOSFET transistor.

Product Features and Performance

Supports a drain-to-source voltage up to 30V

Supports a gate-to-source voltage of up to ±20V

Has a maximum on-resistance (RDS(on)) of 45mΩ at 4.3A and 10V

Capable of handling a continuous drain current of 4.3A at 25°C

Supports a maximum power dissipation of 1.3W at 25°C

Has a threshold voltage (Vgs(th)) of up to 3V at 250μA

Supports a gate charge (Qg) of up to 24nC at 10V

Operates in a temperature range of -55°C to 150°C

Product Advantages

High current capability

Low on-resistance

Wide voltage and temperature operating range

Compact surface mount package

Key Technical Parameters

Drain-to-Source Voltage (VDS): 30V

Gate-to-Source Voltage (VGS): ±20V

On-Resistance (RDS(on)): 45mΩ @ 4.3A, 10V

Continuous Drain Current (ID): 4.3A @ 25°C

Power Dissipation (PD): 1.3W @ 25°C

Threshold Voltage (Vgs(th)): 3V @ 250μA

Gate Charge (Qg): 24nC @ 10V

Quality and Safety Features

RoHS3 compliant

Compatibility

Can be used in various electronic circuits and applications that require a P-channel MOSFET transistor.

Application Areas

Suitable for use in power management, switching, and control circuits.

Product Lifecycle

This product is an active and currently available part from Vishay/Siliconix.

Key Reasons to Choose This Product

High current handling capability

Low on-resistance for efficient power delivery

Wide operating voltage and temperature range

Compact surface mount package for space-constrained designs

RoHS3 compliance for environmental friendliness