Manufacturer Part Number
SI5429DU-T1-GE3
Manufacturer
Electro-Films (EFI) / Vishay
Introduction
High-performance P-channel enhancement-mode power MOSFET in a PowerPAK ChipFET Dual surface-mount package
Product Features and Performance
Low on-resistance
High current capability
Low gate charge
High power dissipation
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Compact PowerPAK ChipFET Dual package
Excellent thermal performance
Optimized for space-constrained applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 15 mOhm @ 7A, 10V
Current Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Quality and Safety Features
Lead-free / RoHS compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Power supplies
Motor drives
Industrial controls
Automotive electronics
Consumer electronics
Product Lifecycle
Currently in production. Replacement or upgrade options may be available in the future.
Key Reasons to Choose This Product
High current and power capability
Low on-resistance for improved efficiency
Compact and thermally efficient PowerPAK ChipFET Dual package
Wide operating temperature range
Compliance with lead-free / RoHS requirements
SI5419DU-T1-GE3 MOSElectro-Films (EFI) / Vishay