SI5415EDU-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI5415EDU-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI5415EDU-T1-GE3 is a discrete semiconductor product, specifically a P-Channel MOSFET in the TrenchFET series.

Product Features and Performance

20V Drain-to-Source Voltage

25A Continuous Drain Current at 25°C

8mΩ Maximum On-Resistance at 10A, 4.5V

4300pF Maximum Input Capacitance at 10V

1W Maximum Power Dissipation at 25°C

-50°C to 150°C Operating Temperature Range

Product Advantages

High current handling capability

Low on-resistance for efficient power conversion

Wide operating temperature range

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20V

Maximum Gate-to-Source Voltage (Vgs): ±8V

Threshold Voltage (Vgs(th)): 1V at 250A

Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

Gate Charge (Qg): 120nC at 8V

Quality and Safety Features

RoHS3 compliant

Housed in a PowerPAK ChipFET Single package

Compatibility

Compatible with surface mount assembly

Application Areas

Power management

Motor control

Switching applications

Product Lifecycle

Currently in production

Replacements and upgrades may be available

Key Reasons to Choose This Product

High current handling

Low on-resistance for efficient power conversion

Wide operating temperature range

Compact and efficient package

RoHS3 compliance for environmental responsibility