Manufacturer Part Number
SI5415AEDU-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This product is a P-channel MOSFET transistor from the TrenchFET series, featuring a PowerPAK ChipFET Single package.
Product Features and Performance
Operating temperature range of -50°C to 150°C
Drain to Source Voltage (Vdss) of 20V
Maximum Gate-Source Voltage (Vgs) of ±8V
Low on-resistance (Rds(on)) of 9.6mΩ @ 10A, 4.5V
Continuous Drain Current (Id) of 25A at 25°C
Input Capacitance (Ciss) of 4300pF @ 10V
Maximum Power Dissipation of 3.1W (Ta), 31W (Tc)
Gate Charge (Qg) of 120nC @ 8V
Product Advantages
Excellent power handling and efficiency
Compact and space-saving PowerPAK ChipFET Single package
Suitable for a wide range of applications
Key Technical Parameters
MOSFET Technology: Trench
FET Type: P-Channel
Threshold Voltage (Vgs(th)) of 1V @ 250A
Drive Voltage Range: 1.8V (min Rds(on)) to 4.5V (max Rds(on))
Quality and Safety Features
RoHS3 Compliant
Suitable for surface mount applications
Compatibility
This MOSFET transistor is compatible with a wide range of electronic circuits and power management applications.
Application Areas
Power supplies
Motor drives
Lighting controls
Automotive electronics
Industrial automation
Product Lifecycle
This product is currently in production and readily available. There are no plans for discontinuation, and no known replacement or upgrade models at this time.
Key Reasons to Choose This Product
Excellent power handling and efficiency through low on-resistance
Compact and space-saving PowerPAK ChipFET Single package
Wide operating temperature range of -50°C to 150°C
Suitable for a variety of power management and control applications
RoHS3 compliance for environmental responsibility
SI5419DU-T1Electro-Films (EFI) / Vishay