Manufacturer Part Number
SI5419DU-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel MOSFET in a small ChipFET package for space-constrained applications.
Product Features and Performance
30V MOSFET with low on-resistance of 20mΩ
High current capability of 12A continuous drain current
Excellent input capacitance of 1400pF
Wide operating temperature range of -55°C to 150°C
Product Advantages
Compact ChipFET package for space-saving
Low on-resistance for efficient power switching
High current handling capability
Suitable for a wide range of operating conditions
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 20mΩ @ 6.6A, 10V
Continuous Drain Current (Id): 12A @ 25°C
Input Capacitance (Ciss): 1400pF @ 15V
Power Dissipation: 3.1W (Ta), 31W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount assembly
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements and upgrades may be available from Vishay/Siliconix.
Key Reasons to Choose This Product
Compact ChipFET package for space-constrained designs
Low on-resistance for efficient power switching
High current handling capability
Wide operating temperature range for versatile applications
RoHS3 compliance for use in regulated environments
SI5406DC-T1-E3-SElectro-Films (EFI) / Vishay