Manufacturer Part Number
SI4488DY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET in a surface mount package
Product Features and Performance
Trench MOSFET technology
150 V drain-to-source voltage
50 mΩ maximum on-resistance
5 A continuous drain current
56 W maximum power dissipation
-55°C to 150°C operating temperature range
Product Advantages
Efficient power switching
High power density
Reliable performance
Wide operating temperature range
Key Technical Parameters
Drain-to-source voltage (Vdss): 150 V
Gate-to-source voltage (Vgs): ±20 V
On-resistance (Rds(on)): 50 mΩ @ 5 A, 10 V
Threshold voltage (Vgs(th)): 2 V @ 250 μA (min)
Gate charge (Qg): 36 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Vishay Siliconix quality and reliability
Compatibility
Suitable for a variety of power switching applications
Application Areas
Power supplies
Motor drives
Lighting ballasts
Industrial controls
Telecommunications equipment
Product Lifecycle
Current product, no plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent power switching performance
Efficient power handling
Robust and reliable operation
Wide temperature range
Surface mount package for easy integration
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SI4488DYVIS