SI4488DY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4488DY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel power MOSFET in a surface mount package

Product Features and Performance

Trench MOSFET technology

150 V drain-to-source voltage

50 mΩ maximum on-resistance

5 A continuous drain current

56 W maximum power dissipation

-55°C to 150°C operating temperature range

Product Advantages

Efficient power switching

High power density

Reliable performance

Wide operating temperature range

Key Technical Parameters

Drain-to-source voltage (Vdss): 150 V

Gate-to-source voltage (Vgs): ±20 V

On-resistance (Rds(on)): 50 mΩ @ 5 A, 10 V

Threshold voltage (Vgs(th)): 2 V @ 250 μA (min)

Gate charge (Qg): 36 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Vishay Siliconix quality and reliability

Compatibility

Suitable for a variety of power switching applications

Application Areas

Power supplies

Motor drives

Lighting ballasts

Industrial controls

Telecommunications equipment

Product Lifecycle

Current product, no plans for discontinuation

Replacement or upgrade options available

Key Reasons to Choose This Product

Excellent power switching performance

Efficient power handling

Robust and reliable operation

Wide temperature range

Surface mount package for easy integration