SI4486EY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4486EY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel TrenchFET power MOSFET

Designed for high-frequency switching applications

Product Features and Performance

Drain to source voltage (Vdss) of 100V

Very low on-resistance (Rds(on)) of 25mΩ @ 7.9A, 10V

Continuous drain current (Id) of 5.4A at 25°C

Power dissipation (Ptot) of 1.8W at 25°C

Fast switching characteristics

Reliable trench MOSFET technology

Product Advantages

Excellent efficiency and power density

Low switching and conduction losses

Suitable for high-frequency, high-power applications

Key Technical Parameters

Vdss: 100V

Vgs (max): ±20V

Rds(on) (max): 25mΩ @ 7.9A, 10V

Id (continuous): 5.4A at 25°C

Ptot (max): 1.8W at 25°C

Temperature range: -55°C to 175°C

Quality and Safety Features

RoHS3 compliant

Reliable trench MOSFET technology

Compatibility

Suitable for a wide range of high-frequency, high-power applications

Application Areas

Switching power supplies

Motor drives

Inverters

Converters

Class-D audio amplifiers

Product Lifecycle

This product is an active and readily available component from Vishay/Siliconix.

Key Reasons to Choose This Product

Excellent efficiency and power density

Very low on-resistance for minimal conduction losses

Fast switching characteristics for high-frequency applications

Wide operating temperature range of -55°C to 175°C

RoHS3 compliance for environmentally-friendly applications

Reliable trench MOSFET technology for long-term performance