SI4487DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4487DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Products

Transistors FETs, MOSFETs Single

Product Features and Performance

ROHS3 Compliant

8-SOIC package

Surface Mount Mounting Type

TrenchFET Series

-55°C ~ 150°C Operating Temperature

30V Drain to Source Voltage

±25V Vgs (Max)

5mOhm Rds On (Max) @ 10A, 10V

MOSFET (Metal Oxide) Technology

6A Continuous Drain Current @ 25°C

1075pF Input Capacitance (Ciss) (Max) @ 15V

5W Power Dissipation (Max) @ Ta, 5W @ Tc

P-Channel FET Type

5V Vgs(th) (Max) @ 250A

5V, 10V Drive Voltage (Max Rds On, Min Rds On)

36nC Gate Charge (Qg) (Max) @ 10V

Product Advantages

High performance MOSFET with low on-resistance

Suitable for a wide range of power switching applications

Robust design and high reliability

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

Vgs (Max): ±25V

Rds On (Max) @ Id, Vgs: 20.5mOhm @ 10A, 10V

Continuous Drain Current (Id) @ 25°C: 11.6A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 15 V

Power Dissipation (Max): 2.5W (Ta), 5W (Tc)

Vgs(th) (Max) @ Id: 2.5V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V

Quality and Safety Features

ROHS3 Compliant

Compatibility

Surface Mount

8-SOIC package

Application Areas

Suitable for a wide range of power switching applications

Product Lifecycle

No information on discontinuation or availability of replacements/upgrades

Key Reasons to Choose This Product

High performance MOSFET with low on-resistance

Robust design and high reliability

Wide operating temperature range

Suitable for a variety of power switching applications