Manufacturer Part Number
SI4490DY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
N-channel enhancement-mode field-effect transistor (MOSFET) in a surface-mount package.
Product Features and Performance
High power density
Fast switching speed
Low on-resistance
Wide operating temperature range (-55°C to 150°C)
Optimized for high-frequency, high-efficiency switching applications
Product Advantages
Excellent energy efficiency
Reliable and durable
Suitable for high-power, high-frequency applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 200V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Continuous Drain Current (Id) @ 25°C: 2.85A
Power Dissipation (Max): 1.56W
Vgs(th) (Max) @ Id: 2V @ 250A (Min)
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Fits 8-SOIC (0.154", 3.90mm Width) package
Application Areas
High-frequency, high-efficiency switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently available
No known plans for discontinuation
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
Excellent power efficiency and switching performance
Wide operating temperature range for reliable operation
Compact surface-mount package for space-constrained designs
RoHS compliance for use in environmentally-conscious applications
Suitability for high-power, high-frequency switching applications
SI4488DYVIS
SI4490DYVishay