SI4490DY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4490DY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

N-channel enhancement-mode field-effect transistor (MOSFET) in a surface-mount package.

Product Features and Performance

High power density

Fast switching speed

Low on-resistance

Wide operating temperature range (-55°C to 150°C)

Optimized for high-frequency, high-efficiency switching applications

Product Advantages

Excellent energy efficiency

Reliable and durable

Suitable for high-power, high-frequency applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 200V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V

Continuous Drain Current (Id) @ 25°C: 2.85A

Power Dissipation (Max): 1.56W

Vgs(th) (Max) @ Id: 2V @ 250A (Min)

Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10V

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Fits 8-SOIC (0.154", 3.90mm Width) package

Application Areas

High-frequency, high-efficiency switching power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

Currently available

No known plans for discontinuation

Replacement or upgrade options may be available from the manufacturer

Several Key Reasons to Choose This Product

Excellent power efficiency and switching performance

Wide operating temperature range for reliable operation

Compact surface-mount package for space-constrained designs

RoHS compliance for use in environmentally-conscious applications

Suitability for high-power, high-frequency switching applications