SI4490DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4490DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel enhancement-mode power MOSFET

Product Features and Performance

Optimized for power switching and amplifier applications

Low on-resistance

Fast switching

Low gate charge

Wide operating temperature range

Product Advantages

Excellent power conversion efficiency

Reliable high-voltage operation

Compact surface-mount package

Key Technical Parameters

Drain to Source Voltage (Vdss): 200 V

Maximum Gate-Source Voltage (Vgs): ±20 V

On-Resistance (Rds(on)): 80 mΩ @ 4 A, 10 V

Continuous Drain Current (Id): 2.85 A @ 25°C

Maximum Power Dissipation: 1.56 W @ 25°C

Quality and Safety Features

RoHS3 compliant

Designed for high reliability and long-term performance

Compatibility

Compatible with standard MOSFET drivers and controllers

Application Areas

Power conversion and control

Motor drives

Switching power supplies

Industrial and consumer electronics

Product Lifecycle

Active product

Replacement and upgrade options available

Key Reasons to Choose This Product

Excellent power efficiency and reliability

Wide operating temperature range

Compact surface-mount package

Proven performance in various power applications