Manufacturer Part Number
SI4490DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel enhancement-mode power MOSFET
Product Features and Performance
Optimized for power switching and amplifier applications
Low on-resistance
Fast switching
Low gate charge
Wide operating temperature range
Product Advantages
Excellent power conversion efficiency
Reliable high-voltage operation
Compact surface-mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 200 V
Maximum Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 80 mΩ @ 4 A, 10 V
Continuous Drain Current (Id): 2.85 A @ 25°C
Maximum Power Dissipation: 1.56 W @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and long-term performance
Compatibility
Compatible with standard MOSFET drivers and controllers
Application Areas
Power conversion and control
Motor drives
Switching power supplies
Industrial and consumer electronics
Product Lifecycle
Active product
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and reliability
Wide operating temperature range
Compact surface-mount package
Proven performance in various power applications
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