SI4101DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4101DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI4101DY-T1-GE3 is a P-channel TrenchFET MOSFET transistor from Vishay/Siliconix.

Product Features and Performance

30V drain-to-source voltage (Vdss)

Up to 25.7A continuous drain current (Id)

6mΩ maximum on-resistance (Rds(on)) at 15A, 10V

8,190pF maximum input capacitance (Ciss) at 15V

203nC maximum gate charge (Qg) at 10V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Efficient power switching performance

Low on-resistance for low power loss

Compact surface mount 8-SOIC package

Suitable for a variety of power management applications

Key Technical Parameters

P-channel MOSFET

Vgs(th) max of 2.5V at 250A

Drive voltage range of 4.5V to 10V

6W maximum power dissipation (Tc)

Quality and Safety Features

RoHS3 compliant

Tape and reel (TR) packaging

Compatibility

The SI4101DY-T1-GE3 is compatible with various power management and control circuits.

Application Areas

Power supplies

Motor drives

Switching regulators

Battery chargers

DC-DC converters

Product Lifecycle

The SI4101DY-T1-GE3 is an active and available product. Vishay/Siliconix continues to offer this model and provides replacement or upgrade options as needed.

Key Reasons to Choose this Product

Excellent power switching performance with low on-resistance

Compact surface mount package for space-constrained designs

Wide operating temperature range for industrial and automotive applications

Robust quality and safety features, including RoHS3 compliance

Suitable for a wide range of power management and control applications