SI4100DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4100DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel MOSFET transistor designed for power management and switching applications.

Product Features and Performance

Trench technology for low on-resistance and fast switching

Low gate charge for efficient switching

High drain-source voltage rating up to 100V

Continuous drain current up to 6.8A at 25°C

Low on-resistance of 63mOhm max at 4.4A, 10V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent power efficiency and thermal performance

High reliability and robust design

Suitable for various power management and switching applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 100V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 63mOhm max at 4.4A, 10V

Drain Current (Id): 6.8A continuous at 25°C

Input Capacitance (Ciss): 600pF max at 50V

Power Dissipation: 2.5W at 25°C, 6W at case temperature

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of power management and switching applications

Application Areas

Power supplies

Motor drives

Inverters

Switching regulators

Industrial and consumer electronics

Product Lifecycle

This product is an actively supported and widely used MOSFET

Replacement options and upgrades are available from Vishay and other manufacturers

Key Reasons to Choose this Product

Excellent power efficiency and thermal performance

Fast switching and low gate charge for efficient power conversion

High reliability and robust design for industrial and consumer applications

Wide operating temperature range and high voltage rating

Compatibility with various power management and switching circuits