SI4062DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4062DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single

Product Features and Performance

N-Channel MOSFET

Drain to Source Voltage (Vdss): 60V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V

Current Continuous Drain (Id) @ 25°C: 32.1A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 30 V

Power Dissipation (Max): 7.8W (Tc)

Vgs(th) (Max) @ Id: 2.6V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V

Product Advantages

Excellent performance in power management and control applications

Low on-resistance for high efficiency

Fast switching for high-frequency operation

Key Technical Parameters

Discrete Semiconductor: Transistors FETs, MOSFETs Single

Technology: MOSFET (Metal Oxide)

FET Type: N-Channel

Packaging: 8-SOIC, Tape & Reel

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount Mounting Type

Application Areas

Power management and control applications

High-frequency operations

Product Lifecycle

Currently available, no indication of discontinuation

Replacement or upgrade options may be available from Vishay/Siliconix

Key Reasons to Choose This Product

Excellent performance in power management and control applications

Low on-resistance for high efficiency

Fast switching for high-frequency operation

RoHS3 compliant

Surface mount compatibility