SI4103DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4103DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI4103DY-T1-GE3 is a P-Channel MOSFET from the TrenchFET Gen III series, designed for a wide range of power management and switching applications.

Product Features and Performance

30V Drain-Source Voltage (Vdss)

±20V Gate-Source Voltage (Vgs)

9mΩ On-Resistance (Rds(on)) at 10A, 10V

14A Continuous Drain Current (Id) at 25°C

16A Continuous Drain Current (Id) at 25°C with Tc

5200pF Input Capacitance (Ciss) at 15V

5W Power Dissipation at 25°C, 5.2W with Tc

Product Advantages

Efficient power management with low on-resistance

High current handling capability

Compact 8-SOIC surface mount package

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

Drain-Source Voltage (Vdss): 30V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 7.9mΩ @ 10A, 10V

Continuous Drain Current (Id): 14A (Ta), 16A (Tc)

Input Capacitance (Ciss): 5200pF @ 15V

Power Dissipation: 2.5W (Ta), 5.2W (Tc)

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for surface mount assembly

Compatibility

Compatible with a wide range of power management and switching applications.

Application Areas

Power management circuits

Switching applications

Battery charging and protection circuits

Motor control

Industrial and consumer electronics

Product Lifecycle

The SI4103DY-T1-GE3 is an active product, and Vishay / Siliconix continues to offer it as part of their TrenchFET Gen III series. Replacement or upgrade options may be available from Vishay / Siliconix or other manufacturers.

Key Reasons to Choose This Product

Excellent power handling capabilities with low on-resistance

Compact and efficient surface mount package

Wide operating temperature range

Robust design and RoHS3 compliance

Compatibility with a wide range of power management and switching applications