Manufacturer Part Number
SI4102DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Trench MOSFET technology
100V drain-source voltage
Low on-resistance of 158mΩ
Continuous drain current of 3.8A at 25°C
Operating temperature range of -55°C to 150°C
Low input capacitance of 370pF
Power dissipation of up to 2.4W (Ta) or 4.8W (Tc)
Gate charge of 11nC at 10V
Product Advantages
Excellent performance for power switching applications
Compact 8-SOIC surface mount package
Wide operating temperature range
ROHS3 compliant
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 158mΩ @ 2.7A, 10V
Drain Current (Id): 3.8A
Quality and Safety Features
ROHS3 compliant
Suitable for industrial and harsh environment applications
Compatibility
Suitable for a wide range of power switching applications
Application Areas
Power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
Currently in active production. Replacement or upgrade parts available.
Key Reasons to Choose This Product
Excellent performance and efficiency
Compact surface mount package
Wide operating temperature range
RoHS compliance for environmental safety