SI2308DS-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI2308DS-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single

Product Features and Performance

N-Channel MOSFET

60V Drain to Source Voltage

±20V Gate to Source Voltage

160mΩ Rds(on) @ 2A, 10V

2A Continuous Drain Current @ 25°C

240pF Input Capacitance @ 25V

25W Power Dissipation

3V Vgs(th) @ 250μA

5V/10V Drive Voltage (Max Rds(on), Min Rds(on))

10nC Gate Charge @ 10V

Product Advantages

Low on-resistance for improved efficiency

Fast switching speed

Suitable for high-frequency switching applications

Wide operating temperature range (-55°C to 150°C)

Key Technical Parameters

Drain to Source Voltage (Vdss): 60V

Gate to Source Voltage (Vgs): ±20V

Rds(on) @ Id, Vgs: 160mΩ @ 2A, 10V

Continuous Drain Current (Id) @ 25°C: 2A

Input Capacitance (Ciss) @ Vds: 240pF @ 25V

Power Dissipation (Max): 1.25W

Quality and Safety Features

RoHS3 Compliant

Surface Mount Packaging (SOT-23-3)

Compatibility

Can be used in a wide range of electronic devices and circuits requiring high-performance N-Channel MOSFETs

Application Areas

Switching power supplies

Motor control

DC/DC converters

Lighting control

General purpose switching applications

Product Lifecycle

Currently available

No information on discontinuation or replacement

Key Reasons to Choose This Product

Low on-resistance for improved efficiency

Fast switching speed for high-frequency applications

Wide operating temperature range for versatility

Surface mount packaging for compact design

RoHS3 compliance for environmental responsibility