Manufacturer Part Number
SI2308BDS-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
N-channel enhancement-mode power MOSFET
Part of the TrenchFET series
Product Features and Performance
Designed for power switching and amplifier applications
Low on-resistance (RDS(on) = 156 mΩ) for low conduction losses
High current capability (ID = 2.3 A)
Fast switching speed
Wide operating temperature range (-55°C to 150°C)
Low gate charge (Qg = 6.8 nC) for efficient switching
Product Advantages
Excellent thermal performance
Rugged and reliable
Efficient power conversion
Compact size
Key Technical Parameters
Drain-Source Voltage (VDS): 60 V
Gate-Source Voltage (VGS): ±20 V
Continuous Drain Current (ID): 2.3 A
On-Resistance (RDS(on)): 156 mΩ
Input Capacitance (Ciss): 190 pF
Power Dissipation (Ptot): 1.09 W (Ta), 1.66 W (Tc)
Quality and Safety Features
RoHS3 compliant
Meets industrial and automotive quality standards
Compatibility
Suitable for a wide range of power switching and amplifier applications
Application Areas
Power supplies
Motor drives
Lighting and LED drivers
Industrial and automotive electronics
Product Lifecycle
Current product, no known discontinuation plans
Replacements and upgrades available as technology advances
Key Reasons to Choose This Product
Excellent performance-to-size ratio
Efficient power conversion with low conduction losses
Reliable and rugged design for demanding applications
Compatibility with a wide range of power electronics systems
Meets industry quality and safety standards