Manufacturer Part Number
SI2308BDS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SI2308BDS-T1-GE3 is a N-Channel MOSFET transistor from Vishay Siliconix's TrenchFET series.
Product Features and Performance
60V Drain-Source Voltage (Vdss)
±20V Gate-Source Voltage (Vgs)
156mΩ On-Resistance (Rds(on)) @ 1.9A, 10V
3A Continuous Drain Current (Id) @ 25°C
190pF Input Capacitance (Ciss) @ 30V
09W Power Dissipation (Ta), 1.66W (Tc)
-55°C to 150°C Operating Temperature Range
Product Advantages
Low on-resistance for efficient power switching
High voltage and current handling capabilities
Compact SOT-23-3 surface mount package
Key Technical Parameters
N-Channel MOSFET
60V Drain-Source Voltage
±20V Gate-Source Voltage
156mΩ On-Resistance
3A Continuous Drain Current
190pF Input Capacitance
Quality and Safety Features
RoHS3 compliant
Reliable trench MOSFET technology
Compatibility
Suitable for a variety of power switching applications.
Application Areas
Power supplies
Motor drives
Lighting control
Battery chargers
General purpose switching
Product Lifecycle
The SI2308BDS-T1-GE3 is an active product. No information on discontinuation or replacements.
Key Reasons to Choose
Low on-resistance for efficient power switching
High voltage and current handling
Compact surface mount package
Reliable trench MOSFET technology
Suitable for a wide range of power switching applications