SI2308CDS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2308CDS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI2308CDS-T1-GE3 is a high-performance N-channel power MOSFET from Vishay's TrenchFET Gen IV series, designed for a wide range of power switching and control applications.

Product Features and Performance

Low on-resistance (Rds(on)) of 144 mΩ @ 1.9 A, 10 V

High continuous drain current (Id) of 2.6 A at 25°C case temperature

Wide operating temperature range of -55°C to 150°C

Low input capacitance (Ciss) of 105 pF @ 30 V

Fast switching capabilities with low gate charge (Qg) of 4 nC @ 10 V

Product Advantages

Efficient power conversion and control

Compact surface-mount package (SOT-23-3)

Reliable performance over a wide temperature range

Compatibility with various control circuits

Key Technical Parameters

Drain to Source Voltage (Vdss): 60 V

Gate to Source Voltage (Vgs): ±20 V

Threshold Voltage (Vgs(th)): 3 V @ 250 μA

Drive Voltage (Max Rds(on), Min Rds(on)): 4.5 V, 10 V

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of power switching and control applications

Application Areas

Power supplies

Motor drives

Lighting control

Industrial automation

Telecommunications equipment

Product Lifecycle

The SI2308CDS-T1-GE3 is an active product, with no indication of discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Efficient power conversion and control with low on-resistance and fast switching capabilities.

Compact surface-mount package for space-constrained designs.

Reliable performance over a wide temperature range.

Compatibility with various control circuits, enabling flexible system integration.

RoHS3 compliance for environmentally-friendly applications.