Manufacturer Part Number
SI2309CDS-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
60V Drain-Source Voltage
345mOhm On-Resistance
6A Continuous Drain Current
210pF Input Capacitance
1W Power Dissipation
Product Advantages
Low On-Resistance
High Voltage Capability
Small Footprint
Key Technical Parameters
Vdss: 60V
Vgs(Max): ±20V
Rds(On) @ 1.25A, 10V: 345mOhm
Id @ 25°C: 1.6A
Ciss @ 30V: 210pF
Power Dissipation: 1W (Ta), 1.7W (Tc)
Quality and Safety Features
RoHS3 Compliant
Operating Temperature: -55°C to 150°C
Compatibility
Compatible with SOT-23-3 (TO-236) package
Application Areas
Power Management
Switching Applications
General Purpose Amplifiers
Product Lifecycle
Current production
Replacements and upgrades available
Key Reasons to Choose
Low On-Resistance
High Voltage Capability
Small Footprint
RoHS Compliance
Wide Temperature Range