Manufacturer Part Number
SI2309DS-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
P-Channel MOSFET Transistor
Product Features and Performance
Trench MOSFET technology
Low on-resistance
Fast switching speed
Wide operating temperature range (-55°C to 150°C)
High breakdown voltage (60V)
Low gate charge (12nC @ 10V)
Product Advantages
Efficient power handling
Reliable performance
Compact surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 340mΩ @ 1.25A, 10V
Continuous Drain Current (Id): 1.25A @ 25°C
Power Dissipation (Pd): 1.25W @ 25°C
Gate Threshold Voltage (Vgs(th)): 1V @ 250μA (min)
Quality and Safety Features
RoHS3 compliant
Housed in a safe, reliable SOT-23-3 (TO-236) package
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Switching power supplies
Motor drives
Battery management systems
General-purpose power control and switching
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High efficiency and low power loss due to low on-resistance
Fast switching capabilities for improved system performance
Wide operating temperature range for versatile applications
Compact and reliable surface mount package
RoHS compliance for environmentally-friendly use