SI2309CDS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2309CDS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

This product is a single P-channel MOSFET transistor from the TrenchFET series, designed for a wide range of power management and switching applications.

Product Features and Performance

60V Drain to Source Voltage (Vdss)

±20V Gate to Source Voltage (Vgs)

345mOhm maximum On-State Resistance (Rds(on)) at 1.25A, 10V

6A Continuous Drain Current (Id) at 25°C

210pF maximum Input Capacitance (Ciss) at 30V

1W Power Dissipation (Ta), 1.7W (Tc)

Operating Temperature Range: -55°C to 150°C

Product Advantages

Efficient power switching and control

Compact surface mount package

Reliable performance in a wide range of operating conditions

Key Technical Parameters

MOSFET Technology

P-Channel FET Type

3V maximum Gate-to-Source Threshold Voltage (Vgs(th)) at 250μA

5V to 10V Drive Voltage Range

1nC maximum Gate Charge (Qg) at 4.5V

Quality and Safety Features

RoHS3 Compliant

Tape and Reel Packaging

Compatibility

This MOSFET is compatible with a wide range of power management and control applications, such as DC-DC converters, motor drives, and power switches.

Application Areas

Power management and control systems

DC-DC converters

Motor drives

Power switches

Product Lifecycle

The SI2309CDS-T1-GE3 is an actively supported product in the Vishay / Siliconix portfolio. Replacement or upgrade options may be available if the product is nearing discontinuation.

Key Reasons to Choose This Product

Efficient power switching and control capabilities

Compact and reliable surface mount package

Wide operating temperature range

Compliance with RoHS3 standards

Compatibility with a variety of power management applications