SI2307CDS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2307CDS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

P-Channel MOSFET Transistor

Product Features and Performance

30V Drain-Source Voltage

5A Continuous Drain Current

88mΩ Max On-Resistance

340pF Input Capacitance

1W Power Dissipation (Ta), 1.8W (Tc)

Product Advantages

High efficiency and low power loss

Compact SOT-23-3 package

Suitable for high-frequency and high-power applications

Key Technical Parameters

Vds: 30V

Vgs (Max): ±20V

Rds On (Max): 88mΩ

Technology: MOSFET (Metal Oxide)

Current Continuous Drain (Id): 3.5A

Input Capacitance (Ciss): 340pF

Power Dissipation (Max): 1.1W (Ta), 1.8W (Tc)

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount applications

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Switching power supplies

DC/DC converters

Motor drives

Battery chargers

General-purpose power management

Product Lifecycle

Current product, no indication of discontinuation

Replacement or upgrade options may be available

Key Reasons to Choose This Product

High efficiency and low power loss

Compact and space-saving design

Suitable for high-frequency and high-power applications

Reliable performance and RoHS3 compliance

Wide range of compatibility and application areas