SI2307BDS-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI2307BDS-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

P-channel TrenchFET MOSFET with low on-resistance and high-speed switching

Product Features and Performance

Low on-resistance of 78 mΩ at 3.2 A and 10 V

Continuous drain current of 2.5 A at 25°C

Wide operating temperature range of -55°C to 150°C

Fast switching with low gate charge of 15 nC at 10 V

Compact SOT-23-3 (TO-236) surface-mount package

Product Advantages

Excellent efficiency and thermal performance

Reliable and robust design

Suitable for high-speed, high-current switching applications

Key Technical Parameters

Drain-to-source voltage (Vdss): 30 V

Gate-to-source voltage (Vgs): ±20 V

Threshold voltage (Vgs(th)): 3 V at 250 μA

Input capacitance (Ciss): 380 pF at 15 V

Power dissipation (Pd): 750 mW

Quality and Safety Features

RoHS3 compliant

Meets JEDEC standards for quality and reliability

Compatibility

Compatible with a wide range of electronic devices and circuits

Application Areas

Switching power supplies

Motor drives

DC/DC converters

Voltage regulators

Battery chargers

Product Lifecycle

This product is an active and widely used TrenchFET MOSFET

Replacement and upgrade options are available from Vishay and other manufacturers

Key Reasons to Choose This Product

Excellent efficiency and thermal performance for high-power, high-speed switching applications

Reliable and robust design for long-term use

Compact and easy-to-use surface-mount package

Wide operating temperature range for versatile applications

RoHS3 compliance for environmentally-friendly use