Manufacturer Part Number
SI2307CDS-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
P-Channel enhancement mode MOSFET transistor
Product Features and Performance
Trench technology MOSFET
Low on-resistance
Fast switching speed
High current capability
Suitable for power conversion and control applications
Product Advantages
Excellent RDS(on) performance
Compact surface-mount packaging
Wide operating temperature range
High power dissipation capability
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30V
Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 88mΩ @ 3.5A, 10V
Continuous Drain Current (ID): 3.5A (at 25°C)
Input Capacitance (Ciss): 340pF @ 15V
Power Dissipation: 1.1W (at 25°C), 1.8W (at case temperature)
Gate Charge (Qg): 6.2nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Suitable for Tape and Reel packaging
Compatibility
TO-236-3, SC-59, SOT-23-3 package types
Compatible with standard MOSFET drivers and controllers
Application Areas
Power conversion and control circuits
Switching power supplies
Motor drives
Battery chargers
Automotive electronics
Product Lifecycle
Current production, no indication of discontinuation
Replacement parts and upgrades available
Key Reasons to Choose This Product
Excellent RDS(on) performance for efficient power conversion
Wide operating temperature range for versatile applications
Compact surface-mount packaging for space-constrained designs
High current and power dissipation capabilities
Fast switching speed for high-frequency power conversion