SI2307BDS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2307BDS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI2307BDS-T1-GE3 is a P-channel enhancement-mode MOSFET transistor in a SOT-23-3 package.

Product Features and Performance

P-channel MOSFET transistor

Drain-to-Source Voltage (Vdss) of 30V

Drain Current (Id) of 2.5A at 25°C

On-Resistance (Rds(on)) of 78mΩ at 3.2A, 10V

Input Capacitance (Ciss) of 380pF at 15V

Power Dissipation (Pd) of 750mW at 25°C

Product Advantages

Compact SOT-23-3 package

Low on-resistance for improved efficiency

High drain current capability

Suitable for a variety of power management applications

Key Technical Parameters

Vdss: 30V

Vgs(max): ±20V

Rds(on)(max): 78mΩ

Id(max): 2.5A

Ciss(max): 380pF

Pd(max): 750mW

Quality and Safety Features

RoHS3 compliant

Suitable for high-temperature operation up to 150°C

Compatibility

Suitable for surface mount applications

Application Areas

Power management

Battery chargers

Switching regulators

Load switching

Motor control

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Compact size

Low on-resistance for improved efficiency

High drain current capability

Suitable for high-temperature operation

RoHS3 compliance for environmental safety