Manufacturer Part Number
SI2307CDS-T1-BE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel enhancement-mode power MOSFET in a small SOT-23-3 package.
Product Features and Performance
P-channel enhancement-mode MOSFET
Low on-resistance (Rds(on)) of 88 mΩ
Low gate charge (Qg) of 6.2 nC
High current capability of 2.7 A (Ta), 3.5 A (Tc)
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 340 pF
Product Advantages
Excellent power efficiency
Compact SOT-23-3 package
Suitable for high-frequency switching applications
Reliable performance across a wide temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Gate-Source Voltage (Vgs Max): ±20 V
Drain Current (Id): 2.7 A (Ta), 3.5 A (Tc)
On-Resistance (Rds(on)): 88 mΩ
Input Capacitance (Ciss): 340 pF
Power Dissipation (Max): 1.1 W (Ta), 1.8 W (Tc)
Quality and Safety Features
Robust design for reliable operation
Tested and qualified to industry standards
RoHS-compliant and halogen-free
Compatibility
Suitable for a wide range of power electronic applications
Can be used in various circuits, such as power supplies, motor drives, and switching amplifiers
Application Areas
Power management circuits
Power amplifiers
Motor control systems
Switching power supplies
General-purpose power switching applications
Product Lifecycle
Currently available and in active production
No known plans for discontinuation
Replacement or upgrade options may be available from Vishay/Siliconix
Several Key Reasons to Choose This Product
Excellent power efficiency and low on-resistance
Compact and space-saving SOT-23-3 package
Wide operating temperature range for reliable performance
Suitable for high-frequency switching applications
Robust design and compliance with industry standards
Availability and long-term support from Vishay/Siliconix