SI1012R-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI1012R-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Single N-Channel Transistor FET, MOSFET

Product Features and Performance

Trench MOSFET technology

20V Drain-Source Voltage

700mΩ On-Resistance at 600mA, 4.5V

500mA Continuous Drain Current at 25°C

150mW Power Dissipation

-55°C to 150°C Operating Temperature

Product Advantages

Efficient power conversion and control

Compact surface mount package

Wide operating temperature range

Key Technical Parameters

Vds: 20V

Vgs (max): ±6V

Rds(on) (max): 700mΩ @ 600mA, 4.5V

Id (continuous): 500mA @ 25°C

Pd (max): 150mW

Quality and Safety Features

RoHS3 compliant

Compatibility

Fits SC-75, SOT-416 package

Application Areas

Power management

Motor control

Switching circuits

General purpose amplification and switching

Product Lifecycle

Current production, no indication of discontinuation

Replacements and upgrades available

Key Reasons to Choose

Efficient trench MOSFET technology

Low on-resistance for low power loss

Wide operating temperature range

Compact surface mount package

RoHS3 compliance for environmental safety