Manufacturer Part Number
SI1012CR-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This is a discrete semiconductor product, specifically a transistor - FET, MOSFET - Single.
Product Features and Performance
ROHS3 Compliant
Surface Mount Mounting Type
Operates in the -55°C to 150°C temperature range
20V Drain to Source Voltage
Maximum ±8V Gate to Source Voltage
396mΩ maximum On-Resistance at 600mA, 4.5V
630mA maximum Continuous Drain Current at 25°C
43pF maximum Input Capacitance at 10V
240mW maximum Power Dissipation
N-Channel FET Type
1V maximum Gate Threshold Voltage at 250μA
5V to 4.5V Drive Voltage Range
2nC maximum Gate Charge at 8V
Product Advantages
Efficient power handling
Wide operating temperature range
Low on-resistance for low power loss
Compact surface mount package
Key Technical Parameters
Drain to Source Voltage
Gate to Source Voltage
On-Resistance
Drain Current
Input Capacitance
Power Dissipation
FET Type
Gate Threshold Voltage
Drive Voltage Range
Gate Charge
Quality and Safety Features
ROHS3 compliant
Compatibility
Surface mount applications
Application Areas
Power management
Switching circuits
Amplifier circuits
Product Lifecycle
Current production
Replacements and upgrades may be available
Key Reasons to Choose
Wide temperature range
Low on-resistance for efficient power handling
Compact surface mount package
ROHS compliance for environmental responsibility