Manufacturer Part Number
SI1012R-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance, general-purpose N-channel enhancement-mode power MOSFET in a small SC-75A package.
Product Features and Performance
Trench MOSFET technology
Low on-resistance for high efficiency
Fast switching for high-frequency applications
Suitable for a wide range of power management and switching applications
Product Advantages
Excellent power efficiency
Compact package for space-saving designs
Robust and reliable operation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Max Gate-to-Source Voltage (Vgs): ±6V
On-Resistance (Rds(on)): 700mΩ @ 600mA, 4.5V
Continuous Drain Current (Id): 500mA (Ta)
Power Dissipation (Pd): 150mW (Ta)
Threshold Voltage (Vgs(th)): 900mV @ 250μA
Gate Charge (Qg): 0.75nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation (-55°C to 150°C)
Compatibility
Surface mount package (SC-75A)
Compatible with common power management and switching applications
Application Areas
Power management
Switching applications
Motor control
Battery-powered devices
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacements and upgrades may be available from Vishay/Siliconix.
Key Reasons to Choose This Product
Excellent power efficiency and performance
Compact package for space-saving designs
Robust and reliable operation across a wide temperature range
Suitable for a variety of power management and switching applications