Manufacturer Part Number
STU12N60M2
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance power MOSFET
Part of the MDmesh M2 series
Product Features and Performance
600V drain-source voltage
9A continuous drain current at 25°C
450mΩ maximum on-resistance
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 538pF
High power dissipation of 85W
Product Advantages
Excellent switching characteristics
High reliability
Robust design
Key Technical Parameters
Drain-source voltage (Vdss): 600V
Gate-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 450mΩ
Continuous drain current (Id): 9A
Input capacitance (Ciss): 538pF
Power dissipation (Ptot): 85W
Quality and Safety Features
RoHS3 compliant
Suitable for high-voltage, high-power applications
Compatibility
Through-hole mounting
TO-251 (IPAK) package
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose
Excellent performance and reliability
Wide operating temperature range
Robust design for high-voltage, high-power applications
Compatibility with various mounting and packaging requirements