Manufacturer Part Number
STU10NM60N
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
600V Drain to Source Voltage
10A Continuous Drain Current
550mOhm On-State Resistance
70W Power Dissipation
-55°C to 150°C Operating Temperature Range
540pF Input Capacitance
19nC Gate Charge
Product Advantages
High Voltage Handling Capability
Low On-State Resistance
Wide Operating Temperature Range
Suitable for High Power Applications
Key Technical Parameters
Drain to Source Voltage: 600V
Gate to Source Voltage: ±25V
Continuous Drain Current: 10A
On-State Resistance: 550mOhm
Power Dissipation: 70W
Quality and Safety Features
RoHS3 Compliant
TO-251 (IPAK) Package
Compatibility
Through-Hole Mounting
Application Areas
Industrial Power Supplies
Motor Drives
Welding Equipment
Lighting Ballasts
Induction Heating
Product Lifecycle
Active product
Replacement and upgrade options available
Key Reasons to Choose
High voltage and current capability
Low on-resistance for high efficiency
Wide operating temperature range
Compact and reliable package
Suitable for high power applications