STU13N60M2 - STMicroelectronics

Manufacturer Part Number

STU13N60M2

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel power MOSFET with advanced MDmesh II Plus technology

Product Features and Performance

Low on-resistance down to 380 mΩ

Fast switching speed

High breakdown voltage up to 600 V

Low gate charge for efficient driving

Wide operating temperature range from -55°C to 150°C

Product Advantages

Excellent efficiency and high power density

Reliable and robust design

Suitable for a wide range of power applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 600 V

Vgs (Max): ±25 V

Rds On (Max) @ Id, Vgs: 380 mΩ @ 5.5 A, 10 V

Current Continuous Drain (Id) @ 25°C: 11 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V

Power Dissipation (Max): 110 W (Tc)

Quality and Safety Features

RoHS3 compliant

Reliable and robust design

Compatibility

Suitable for a wide range of power applications, such as power supplies, motor drives, and industrial electronics

Application Areas

Power supplies

Motor drives

Industrial electronics

Product Lifecycle

Currently available

No information on discontinuation or replacement

Several Key Reasons to Choose This Product

Excellent efficiency and high power density

Reliable and robust design

Wide operating temperature range

Suitable for a wide range of power applications