Manufacturer Part Number
STU13005N
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Bipolar Junction Transistor (BJT)
Product Features and Performance
30W Power Rating
400V Collector-Emitter Breakdown Voltage
3A Collector Current Rating
1mA Collector Cutoff Current
5V Collector-Emitter Saturation Voltage @ 3A Collector Current
10 Minimum DC Current Gain @ 1A Collector Current
Product Advantages
Robust design for high-power applications
High-voltage and high-current capability
Efficient power handling
Key Technical Parameters
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Package: TO-251-3 (IPAK)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Through-hole mounting
Application Areas
High-power switching circuits
Amplifier circuits
Power supplies
Motor controls
Product Lifecycle
Currently available
No known plans for discontinuation
Key Reasons to Choose This Product
Robust and reliable performance
Capable of handling high power and voltage
Efficient power handling for various high-power applications
Ease of integration with through-hole mounting
