Manufacturer Part Number
STU10N60M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with advanced MDmesh II Plus technology
Product Features and Performance
High-efficiency power conversion
Low on-resistance and fast switching
Wide operating temperature range (-55°C to 150°C)
High drain-to-source voltage (600V)
Low input capacitance (400pF)
Low gate charge (13.5nC)
Product Advantages
Excellent power conversion efficiency
Robust and reliable performance
Suitable for a wide range of applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 600mΩ @ 3A, 10V
Continuous Drain Current (Id): 7.5A @ 25°C
Input Capacitance (Ciss): 400pF @ 100V
Power Dissipation (Tc): 85W
Quality and Safety Features
RoHS3 compliant
Meets industrial safety and reliability standards
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
Current product offering
Replacements and upgrades may be available
Key Reasons to Choose This Product
High efficiency and performance
Robust and reliable operation
Wide temperature range and voltage capabilities
Suitable for a variety of power electronics applications
Compliance with industry safety and environmental standards
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