Manufacturer Part Number
STP10NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in TO-220 package
Product Features and Performance
Wide operating temperature range (-55°C to 150°C)
High drain-to-source voltage (600V)
Low on-resistance (600mΩ @ 4A, 10V)
High current capability (8A continuous drain current at 25°C)
Fast switching speed
Low gate charge (20nC @ 10V)
Suitable for a wide range of power conversion and control applications
Product Advantages
Excellent power efficiency and thermal management
Reliable and robust design
Optimized for high-frequency and high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 600mΩ @ 4A, 10V
Continuous Drain Current (Id): 8A @ 25°C
Input Capacitance (Ciss): 577pF @ 50V
Power Dissipation (Tc): 70W
Quality and Safety Features
RoHS3 compliant
Sturdy TO-220 package for reliable operation
Compatibility
Suitable for a wide range of power conversion and control applications, such as:
Switched-mode power supplies
Motor drives
Inverters
Automotive electronics
Application Areas
Power conversion and control
Industrial electronics
Automotive electronics
Appliances
Product Lifecycle
This product is currently in production and readily available. There are no plans for discontinuation in the near future.
Key Reasons to Choose This Product
High power efficiency and thermal performance
Robust and reliable design for demanding applications
Wide operating voltage and temperature range
Fast switching capability for high-frequency operations
Cost-effective solution for power conversion and control systems
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