STP10NM60ND - STMicroelectronics

Manufacturer Part Number

STP10NM60ND

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel power MOSFET in TO-220 package

Product Features and Performance

Wide operating temperature range (-55°C to 150°C)

High drain-to-source voltage (600V)

Low on-resistance (600mΩ @ 4A, 10V)

High current capability (8A continuous drain current at 25°C)

Fast switching speed

Low gate charge (20nC @ 10V)

Suitable for a wide range of power conversion and control applications

Product Advantages

Excellent power efficiency and thermal management

Reliable and robust design

Optimized for high-frequency and high-power applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±25V

On-Resistance (Rds(on)): 600mΩ @ 4A, 10V

Continuous Drain Current (Id): 8A @ 25°C

Input Capacitance (Ciss): 577pF @ 50V

Power Dissipation (Tc): 70W

Quality and Safety Features

RoHS3 compliant

Sturdy TO-220 package for reliable operation

Compatibility

Suitable for a wide range of power conversion and control applications, such as:

Switched-mode power supplies

Motor drives

Inverters

Automotive electronics

Application Areas

Power conversion and control

Industrial electronics

Automotive electronics

Appliances

Product Lifecycle

This product is currently in production and readily available. There are no plans for discontinuation in the near future.

Key Reasons to Choose This Product

High power efficiency and thermal performance

Robust and reliable design for demanding applications

Wide operating voltage and temperature range

Fast switching capability for high-frequency operations

Cost-effective solution for power conversion and control systems