Manufacturer Part Number
STP10NM60N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in a TO-220 package
Product Features and Performance
600V drain-source voltage
10A continuous drain current at 25°C (Tc)
550mΩ maximum on-resistance at 4A, 10V
Low input capacitance of 540pF at 50V
Suitable for various power conversion and switching applications
Product Advantages
Robust and reliable design
Wide operating temperature range of -55°C to 150°C
Low conduction losses
High efficiency and fast switching
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 550mΩ @ 4A, 10V
Continuous Drain Current (Id): 10A @ 25°C (Tc)
Input Capacitance (Ciss): 540pF @ 50V
Power Dissipation (Ptot): 70W @ Tc
Quality and Safety Features
RoHS3 compliant
Meets industrial safety and reliability standards
Compatibility
Suitable for various power conversion and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial and domestic appliances
Product Lifecycle
Current and widely available product
No plans for discontinuation
Several Key Reasons to Choose This Product
Excellent performance and efficiency
Robust and reliable design
Wide operating temperature range
Compact TO-220 package
RoHS3 compliance for environmental sustainability