Manufacturer Part Number
STP10NK80Z
Manufacturer
STMicroelectronics
Introduction
High-power N-channel MOSFET transistor
Product Features and Performance
High blocking voltage of 800V
Low on-resistance of 900mΩ @ 4.5A, 10V
Continuous drain current of 9A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 2180pF @ 25V
Maximum power dissipation of 190W at Tc
Product Advantages
Suitable for high-voltage, high-power applications
Excellent performance-to-cost ratio
Robust and reliable design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs Max): ±30V
On-Resistance (Rds(on) Max): 900mΩ @ 4.5A, 10V
Drain Current (Id Continuous): 9A @ 25°C
Input Capacitance (Ciss Max): 2180pF @ 25V
Power Dissipation (Max): 190W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for through-hole mounting
Designed for reliable and safe operation
Compatibility
Compatible with various high-power, high-voltage applications
Application Areas
High-voltage, high-power switching applications
Industrial power supplies
Motor drives
Inverters and converters
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose
Excellent performance-to-cost ratio
Wide operating temperature range
Robust and reliable design
Suitable for high-voltage, high-power applications
RoHS3 compliance for environmental safety
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